The working principle, the analysis of the parameters and the developing status of fast soft recovery diode are introduced in this paper. 详细介绍了快速软恢复二极管的工作原理、参数分析和现状,并且指出了快速软恢复二极管的发展方向及主要的技术难点。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode. 采用直拉单晶硅片代替成本较高的外延硅片,采取铂扩散的方法引入复合中心,从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Power fast recovery diode, which is abbreviated to FRD, is one of the key devices in modern power electronic technology. In the power electronic circuits, FRD is usually parallel connected with three-end power devices as their freewheeling diode. 高压功率快恢复二极管(以下简称FRD)广泛地应用于电力电子电路中,作为续流二极管与三端功率器件并联使用,是现代电力电子技术中的关键器件。
Experiment on Localized Platinum Doping Lifetime Control in Fast Recovery Diode 局域铂掺杂寿命控制快恢复二极管的研究
Numerical Analysis of Local Lifetime Control for Fast Soft Recovery Diode 快速软恢复二极管局域寿命控制数值分析
In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss. 同步整流技术采用低导通电阻的MOS管代替导通压降相对较大的快恢复二极管或肖特基二极管,大大减小了输出整流损耗,效率相对提高。
This paper introduces a fast and soft recovery diode with double base regions by diffusion. 本文介绍了一种采用扩散型双基区结构的快速软恢复二极管。
Summarization of high power fast soft-recovery diode 大功率快速软恢复二极管概述
Study on V_F~ T_ ( RR) Tradeoff of Palladium Doped Fast Recovery Silicon Diode 掺钯硅快恢复二极管VF~T(RR)兼容性研究
Design and emulate of fast and soft-recovery diode 快速软恢复二极管的仿真设计
In this paper, the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed. 探讨了快恢复二极管制造过程中,选择适当的复合中心能级去调整快恢复二极管软度因子和软度的可行性。
The switching losses model of neutral-point-clamped three-level inverter with widely used IGBT and fast recovery diode is developed. 作为方法的应用,研究了三电平中点箝位式变换器开关损耗,研究的器件为主流功率器件IGBT和快恢复二极管。
Owing to fast switch speed characteristic, super fast recovery diode ( SFRD) is widely applied to power electronic technique. 超快恢复二极管开关特性好,广泛应用于电力电子领域。
Finally, a series of important reliability analysis of the semiconductor lighting control key devices including LED, MOSFET, fast recovery diode devices is made from the material structure, working dynamic performance. 最后对半导体照明控制关键器件作了一系列可靠性分析,包括LED、MOSFET、快恢复二极管等器件,如材料结构、工作动态性能等方面一一加以分析。
In fast recovery diode production, the method to reduce minority carrier lifetime and to shorten switching speed is to introduce recombination centre into the device. 在快恢复二极管的制造中,减小器件少子寿命,提高器件开关速度的方法是在器件内部引入复合中心。
This paper mainly discusses the formation and development of high frequency resistance welding machines, especially mentions the demand for large current fast recovery diode. 阐述了高中频电阻焊机的形式、发展,特别是对超大电流FRD快恢复整流二极管的需求。
Secondly, to H bridge inverter and MOS tube synchronous rectifier principle, and analyzed by simulation confirm the application of synchronous rectifier brings MOS tube of power efficiency than fast recovery power diode to much higher. 其次,对H桥逆变及MOS管同步整流原理加以分析,并通过仿真证实了应用MOS管同步整流所带来的电源效率比快恢复整流二极管要高的多。